sot89 pnp silicon power (switching) transistor isssue 1 -november 1998 features * 2w power dissipation * 8a peak pulse current * excellent h fe characteristics up to 10 amps * low saturation voltage e.g. 10mv typ. complimentary type - fcx688b partmarking detail - 789 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -25 v collector-emitter voltage v ceo -25 v emitter-base voltage v ebo -5 v peak pulse current ** i cm -8 a continuous collector current i c -3 a power dissipation at t amb =25c p tot 1 ? 2 ? w w operating and storage temperature range t j :t stg -55 to +150 c ? recommended p tot calculated using fr4 measuring 15x15x0.6mm ? maximum power dissipation is calculated assuming that the device is mounted on fr4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. **measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for these devices refer to the handling instructions when soldering surface mount components. c b c e FCX789A
electrical characteristics (at t amb = 25c) parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo -25 v i c =-100 m a collector-emitter breakdown voltage v (br)ceo -25 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -5 v i e =-100 m a collector cut-off current i cbo -0.1 m a v cb =-15v emitter cut-off current i ebo -0.1 m a v eb =-4v collector-emitter saturation voltage v ce(sat) -190 -400 -320 mv mv mv i c =-1a, i b =-10ma* i c =-2a, i b =-20ma* i c =-3a, i b =-100ma* base-emitter saturation voltage v be(sat) -0.9 v i c =-1a, i b =-10ma* base-emitter turn-on voltage v be(on) -0.8 v ic=-1a, v ce =-2v* static forward current transfer ratio h fe 300 230 180 75 800 i c =-10ma, v ce =-2v i c =-1a, v ce =-2v* i c =-2a, v ce =-2v* i c =-6a, v ce =-2v* transition frequency f t 100 mhz i c =-50ma, v ce =-5v f=50mhz input capacitance c ibo 225 pf v eb =-0.5v, f=1mhz output capacitance c obo 25 pf v cb =-10v, f=1mhz switching times t on t off 35 400 ns ns i c =-500ma, i b1 =-50ma i b2 =-50ma, v cc =-10v *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% FCX789A
FCX789A 0.01 0.1 1 10 0.8 0.6 0 1.6 0.01 0.1 1 10 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 typical characteristics typical characteristics v v ce(sat) ce(sat) v i v i c c i c - collector current (amps) v v ce(sat) ce(sat) v i v i c c i c - collector current (amps) i c - collector current (amps) i c - collector current (amps) h h fe fe v i v i c c v v be(sat) be(sat) v i v i c c i c - collector current (amps) v v be(on) be(on) v i v i c c 750 500 250 v ce - collector voltage (volts) safe operating area safe operating area t amb =25c -55c +25c +100c +175c 0 0 v ce =2v 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 -55c +25c +100c +175c i c /i b =100 i c /i b =10 i c /i b =100 i c /i b =40 1.8 1.4 1.2 1.0 0.4 0.2 i c /i b =100 -55c +25c +100c v ce =2v 0.8 0.6 0 1.6 1.8 1.4 1.2 1.0 0.4 0.2 +100c +25c -55c 100m 1 100 1s 100ms 10 0.1 dc 0.01 10ms 1ms 100us 1 10
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